FNK01N17T - FNK

FNK01N17T N-Channel Power MOSFET

The FNK01N17T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =100V,ID =170A RDS(ON) <5.0mΩ @ VGS=10V (Typ:4.1mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and unif.

Features

● VDS =100V,ID =170A RDS(ON) <5.0mΩ @ VGS=10V (Typ:4.1mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Schematic diagram Application
● Power switching application
● Load switching
● Uninterruptible power supply TO-247 top view Package Marking and Ordering Information Device Marking Device Device Package FNK01N17T FNK01N17T TO-247 Reel Size - Tape width - Absolute Maximum Ratings (TC=.