FNK01N15T - FNK

FNK01N15T N-Channel Power MOSFET

The FNK01N15T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =100V,ID =150A RDS(ON) <5.7mΩ @ VGS=10V (Typ:5.0? mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and un.

Features

● VDS =100V,ID =150A RDS(ON) <5.7mΩ @ VGS=10V (Typ:5.0? mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation Schematic diagram Application
● Power switching application
● Load switching
● Uninterruptible power supply TO-247 top view Package Marking and Ordering Information Device Marking Device Device Package FNK01N15T FNK01N15T TO-247 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter S.