FNK01NS12 - FNK

FNK01NS12 N-Channel Power MOSFET

The FNK01NS12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FNK01NS12 General Features ● VDS =100V,ID =120A RDS(ON) <4.2mΩ @ VGS=10V (Typ:3.3mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stabili.

Features

● VDS =100V,ID =120A RDS(ON) <4.2mΩ @ VGS=10V (Typ:3.3mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Schematic diagram Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply To-220 Top View Package Marking and Ordering Information Device Marking Device Device Package FNK01NS12 FNK01NS12 TO-220 Reel Size - Tape width - Ab.