FNK65N07A - FNK

FNK65N07A N-Channel Power MOSFET

The FNK65N07A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FNK65N07A General Features ● VDS =65V,ID =85A RDS(ON) < 7.7mΩ @ VGS=10V (Typ:6.2mΩ) Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and curr.

Features

● VDS =65V,ID =85A RDS(ON) < 7.7mΩ @ VGS=10V (Typ:6.2mΩ) Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply To-220 Top View Package Marking and Ordering Information Device Marking Device Device Package FNK65N07A FNK65N07A TO-220 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless other.