FNK6585D - FNK

FNK6585D N-Channel Enhancement Mode Power MOSFET

The FNK6585D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =65V,ID =85A RDS(ON) < 8.6mΩ @ VGS=10V (Typ:6.8mΩ) Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good s.

Features

● VDS =65V,ID =85A RDS(ON) < 8.6mΩ @ VGS=10V (Typ:6.8mΩ) Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply To-263 Top View Package Marking and Ordering Information Device Marking Device Device Package FNK6585D FNK6585D TO-263 Reel Size - Tape width - Quant.