FNK6578D - FNK

FNK6578D N-Channel Power MOSFET

The FNK6578D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 65V,ID =78A RDS(ON) < 8.2mΩ @ VGS=10V (Typ:6.7mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized ava.

Features

● VDS = 65V,ID =78A RDS(ON) < 8.2mΩ @ VGS=10V (Typ:6.7mΩ)
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation Schematic diagram Application
● Power switching application
● Hard switched and High frequency circuits
● Uninterruptible power supply To-263 Top View Package Marking and Ordering Information Device Marking Device Device Package FNK6578D FNK6578D TO-263 Reel Size - Tape width - Abso.