FNK6050 - FNK

FNK6050 N-Channel Power MOSFET

The FNK6050 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =50A RDS(ON) <20mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS.

Features

● VDS =60V,ID =50A RDS(ON) <20mΩ @ VGS=10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Schematic diagram Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package 6050 FNK6050 TO-220 Reel Size - Tape width - Absolute Maximum Rating.