FNK60N60 - FNK

FNK60N60 N-Channel Power MOSFET

TheFNK60N60 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =60A RDS(ON) < 11mΩ @ VGS=10V (Typ:8.0m Ω) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized aval.

Features

● VDS = 60V,ID =60A RDS(ON) < 11mΩ @ VGS=10V (Typ:8.0m Ω)
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation Schematic diagram Application
● Power switching application
● Hard switched and High frequency circuits
● Uninterruptible power supply To-220 Top View Package Marking and Ordering Information Device Marking Device Device Package FNK60N60 FNK60N60 TO-220 Reel Size - Tape width - Quan.