FNK60N15D - FNK

FNK60N15D N-Channel Power MOSFET

The FNK 60N15D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =150A RDS(ON) <4.5mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with hig.

Features

● VDS =60V,ID =150A RDS(ON) <4.5mΩ @ VGS=10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply Schematic diagram To-263 Top View Package Marking and Ordering Information Device Marking Device Device Package 60N15 FNK60N15D TO-263 Reel Size - Tape width - Absolute Maximum Rating.