FNK6075K - FNK

FNK6075K N-Channel Power MOSFET

The FNK6075K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FNK6075K General Features ● VDS =60V,ID =75A RDS(ON) < 9.4m Ω @ VGS=10V (Typ:7.5? mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stabili.

Features

● VDS =60V,ID =75A RDS(ON) < 9.4m Ω @ VGS=10V (Typ:7.5? mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible Power Supply Schematic diagram TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package 6075K FNK6075K TO-252-2L Reel Size - Tape width - .