FNK10N25V - FNK

FNK10N25V N-Channel Power MOSFET

The FNK10N25V uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. G D D G General Features ● VDS = 20V,ID = 5A R DS(ON) < 14mΩ @ VGS=2.5V R DS(ON) < 11mΩ @ VGS=4.5V ● High power and curr.

Features

● VDS = 20V,ID = 5A R DS(ON) < 14mΩ @ VGS=2.5V R DS(ON) < 11mΩ @ VGS=4.5V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package SS Schematic diagram Application
●Battery protection
●Load switch
●Power management SOP-8L top view Marking and pin assignment Package Marking and Ordering Information Device Marking Device Device Package FNK10N25V FNK10N25V SOP-8L Reel Size Ø330mm Tape width 12 mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage V.