The FNK01NS12T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FNK01NS12T General Features ● VDS =100V,ID =120A RDS(ON) <4.2mΩ @ VGS=10V (Typ:3.3mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stabi.
● VDS =100V,ID =120A RDS(ON) <4.2mΩ @ VGS=10V
(Typ:3.3mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Schematic diagram
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
TO-247 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK01NS12T
FNK01NS12T
TO-247
Reel Size -
Tape width -
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FNK01NS12 |
FNK |
N-Channel Power MOSFET | |
2 | FNK01N01D |
FNK |
N-Channel Power MOSFET | |
3 | FNK01N08 |
FNK |
N-Channel Power MOSFET | |
4 | FNK01N15 |
FNK |
N-Channel Power MOSFET | |
5 | FNK01N15D |
FNK |
N-Channel Power MOSFET | |
6 | FNK01N15T |
FNK |
N-Channel Power MOSFET | |
7 | FNK01N17 |
FNK |
N-Channel Power MOSFET | |
8 | FNK01N17T |
FNK |
N-Channel Power MOSFET | |
9 | FNK01N30T |
FNK |
N-Channel Power MOSFET | |
10 | FNK0203E |
FNK |
N-Channel Power MOSFET | |
11 | FNK0203EA |
FNK |
N-Channel Power MOSFET | |
12 | FNK0203EB |
FNK |
N-Channel Power MOSFET |