The FLL357ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. This device is assembled in hermetic metal/ceramic package..
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• High Output Power: P1dB=35.5dBm (Typ.) High Gain: G1dB=11.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package
DESCRIPTION
The FLL357ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. This device is assembled in hermetic metal/ceramic package. Fujitsu’s stringent Quality Assurance Program assures the highest reliabil.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FLL351ME |
Fujitsu Media Devices |
L-band medium & high power gaas FTEs | |
2 | FLL300IL-1 |
Fujitsu Microelectronics |
L-band Medium & High Power GAAS Fets | |
3 | FLL300IL-2 |
Fujitsu Microelectronics |
(FLL300IL-1/-2/-3) L-band Medium & High Power GAAS Fets | |
4 | FLL300IL-3 |
Fujitsu Microelectronics |
(FLL300IL-1/-2/-3) L-band Medium & High Power GAAS Fets | |
5 | FLL300IP-4 |
Fujitsu Microelectronics |
L-band Medium & High Power GAAS Fets | |
6 | FLL100 |
FAAM |
Capacitor | |
7 | FLL107ME |
Fujitsu |
L-BAND MEDIUM & HIGH POWER GAAS FET | |
8 | FLL107ME |
Eudyna Devices |
L-BAND MEDIUM & HIGH POWER GAAS FET | |
9 | FLL120MK |
Eudyna Devices |
L-Band Medium & High Power GaAs FET | |
10 | FLL177ME |
Fujitsu |
L-BAND MEDIUM & HIGH POWER GAAS FET | |
11 | FLL200 |
FAAM |
The Relationship for Open Circuit Voltage and Residual Capacity | |
12 | FLL200IB-1 |
Eudyna Devices |
(FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET |