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FLL357ME |
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| Part Number | FLL357ME |
| Manufacturer | Fujitsu Microelectronics |
| Description | The FLL357ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in m... |
| Features |
• • • • • High Output Power: P1dB=35.5dBm (Typ.) High Gain: G1dB=11.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL357ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. This device is assembled in hermetic metal/ceramic package. Fujitsu’s stringent Quality Assurance Program assures the highest reliabil... |
| Document |
 FLL357ME Data Sheet
PDF 132.29KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FLL351ME |
Fujitsu Media Devices |
L-band medium & high power gaas FTEs |
|
| 2 | FLL300IL-1 |
Fujitsu Microelectronics |
L-band Medium & High Power GAAS Fets |
|
| 3 | FLL300IL-2 |
Fujitsu Microelectronics |
(FLL300IL-1/-2/-3) L-band Medium & High Power GAAS Fets |
|
| 4 | FLL300IL-3 |
Fujitsu Microelectronics |
(FLL300IL-1/-2/-3) L-band Medium & High Power GAAS Fets |
|
| 5 | FLL300IP-4 |
Fujitsu Microelectronics |
L-band Medium & High Power GAAS Fets |
|