The FLL300IP-4 is a 30 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers. This new product is uniquely suited for use in Wireless .
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• Push-Pull Configuration High PAE: 40% (Typ.) Broad Frequency Range: 3400 to 3600 MHz. Suitable for class A operation.
DESCRIPTION
The FLL300IP-4 is a 30 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers. This new product is uniquely suited for use in Wireless Local Loop (WLL) base station amplifiers as it offers high gain, long term reliability and ease of us.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FLL300IL-1 |
Fujitsu Microelectronics |
L-band Medium & High Power GAAS Fets | |
2 | FLL300IL-2 |
Fujitsu Microelectronics |
(FLL300IL-1/-2/-3) L-band Medium & High Power GAAS Fets | |
3 | FLL300IL-3 |
Fujitsu Microelectronics |
(FLL300IL-1/-2/-3) L-band Medium & High Power GAAS Fets | |
4 | FLL351ME |
Fujitsu Media Devices |
L-band medium & high power gaas FTEs | |
5 | FLL357ME |
Fujitsu Microelectronics |
L-band Medium & High Power GAAS Fets | |
6 | FLL100 |
FAAM |
Capacitor | |
7 | FLL107ME |
Fujitsu |
L-BAND MEDIUM & HIGH POWER GAAS FET | |
8 | FLL107ME |
Eudyna Devices |
L-BAND MEDIUM & HIGH POWER GAAS FET | |
9 | FLL120MK |
Eudyna Devices |
L-Band Medium & High Power GaAs FET | |
10 | FLL177ME |
Fujitsu |
L-BAND MEDIUM & HIGH POWER GAAS FET | |
11 | FLL200 |
FAAM |
The Relationship for Open Circuit Voltage and Residual Capacity | |
12 | FLL200IB-1 |
Eudyna Devices |
(FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET |