The FLL120MK is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. Eudyna stringent Quality Assurance Program assures the high.
• High Output Power: P1dB = 40.0dBm (Typ.)
• High Gain: G1dB = 10.0dB (Typ.)
• High PAE: ηadd = 40% (Typ.)
• Proven Reliability
• Hermetically Sealed Package
FLL120MK
L-Band Medium & High Power GaAs FET
DESCRIPTION
The FLL120MK is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications.
Eudyna stringent Quality Assurance Program assures the highest reliability and con.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FLL100 |
FAAM |
Capacitor | |
2 | FLL107ME |
Fujitsu |
L-BAND MEDIUM & HIGH POWER GAAS FET | |
3 | FLL107ME |
Eudyna Devices |
L-BAND MEDIUM & HIGH POWER GAAS FET | |
4 | FLL177ME |
Fujitsu |
L-BAND MEDIUM & HIGH POWER GAAS FET | |
5 | FLL200 |
FAAM |
The Relationship for Open Circuit Voltage and Residual Capacity | |
6 | FLL200IB-1 |
Eudyna Devices |
(FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET | |
7 | FLL200IB-2 |
Eudyna Devices |
(FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET | |
8 | FLL200IB-3 |
Eudyna Devices |
(FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET | |
9 | FLL21E004ME |
Eudyna Devices |
High Voltage - High Power GaAs FET | |
10 | FLL21E010MK |
Eudyna Devices |
High Voltage - High Power GaAs FET | |
11 | FLL21E040IK |
Eudyna Devices |
High Voltage - High Power GaAs FET | |
12 | FLL21E045IY |
Eudyna Devices |
High Power GaAs FET |