The FLL200IB-1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. Fujitsu’s stringent Quality Assu.
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• High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 13.0dB (Typ.)@1.8GHz (FLL200IB-1) High PAE: ηadd = 34% (Typ.) Proven Reliability Hermetically Sealed Package
DESCRIPTION
The FLL200IB-1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FLL200IB-1 |
Eudyna Devices |
(FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET | |
2 | FLL200IB-2 |
Eudyna Devices |
(FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET | |
3 | FLL200 |
FAAM |
The Relationship for Open Circuit Voltage and Residual Capacity | |
4 | FLL21E004ME |
Eudyna Devices |
High Voltage - High Power GaAs FET | |
5 | FLL21E010MK |
Eudyna Devices |
High Voltage - High Power GaAs FET | |
6 | FLL21E040IK |
Eudyna Devices |
High Voltage - High Power GaAs FET | |
7 | FLL21E045IY |
Eudyna Devices |
High Power GaAs FET | |
8 | FLL21E060IY |
Eudyna Devices |
High Power GaAs FET | |
9 | FLL21E060IY |
Eudyna Devices |
High Power GaAs FET | |
10 | FLL21E090IK |
Eudyna Devices |
High Voltage - High Power GaAs FET | |
11 | FLL21E090IY |
Eudyna Devices |
High Power GaAs FET | |
12 | FLL21E135IX |
Eudyna Devices |
High Power GaAs FET |