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FLL200IB-3 |
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| Part Number | FLL200IB-3 |
| Manufacturer | Eudyna Devices |
| Description | The FLL200IB-1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon de... |
| Features |
• • • • • High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 13.0dB (Typ.)@1.8GHz (FLL200IB-1) High PAE: ηadd = 34% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL200IB-1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and... |
| Document |
 FLL200IB-3 Data Sheet
PDF 183.22KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FLL200IB-1 |
Eudyna Devices |
(FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET |
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| 2 | FLL200IB-2 |
Eudyna Devices |
(FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET |
|
| 3 | FLL200 |
FAAM |
The Relationship for Open Circuit Voltage and Residual Capacity |
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| 4 | FLL21E004ME |
Eudyna Devices |
High Voltage - High Power GaAs FET |
|
| 5 | FLL21E010MK |
Eudyna Devices |
High Voltage - High Power GaAs FET |
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