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The FLL21E004ME is a high power GaAs FET that offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers. This device is targeted for high voltage, low current operation in digitally modulated amplification. This product is ideally suited for W-CDMA and Multi-carrier PCS base station amplifiers while of.
High Voltage Operation : VDS=28V High Power : P1dB=36dBm(typ.) at f=2.17GHz High Gain: G1dB=14dB(typ.) at f=2.17GHz Broad Frequency Range : 2100 to 2200MHz Proven Reliability High Voltage - High Power GaAs FET DESCRIPTION The FLL21E004ME is a high power GaAs FET that offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers. This device is targeted for high voltage, low current operation in digitally modulated amplification. This product is ideally suited for W-CDMA and Multi-carrier PCS base station amplifiers while offering high gain.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FLL21E010MK |
Eudyna Devices |
High Voltage - High Power GaAs FET |
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| 2 | FLL21E040IK |
Eudyna Devices |
High Voltage - High Power GaAs FET |
|
| 3 | FLL21E045IY |
Eudyna Devices |
High Power GaAs FET |
|
| 4 | FLL21E060IY |
Eudyna Devices |
High Power GaAs FET |
|
| 5 | FLL21E060IY |
Eudyna Devices |
High Power GaAs FET |
|
| 6 | FLL21E090IK |
Eudyna Devices |
High Voltage - High Power GaAs FET |
|
| 7 | FLL21E090IY |
Eudyna Devices |
High Power GaAs FET |
|
| 8 | FLL21E135IX |
Eudyna Devices |
High Power GaAs FET |
|
| 9 | FLL21E180IU |
Eudyna Devices |
High Voltage - High Power GaAs FET |
|
| 10 | FLL200 |
FAAM |
The Relationship for Open Circuit Voltage and Residual Capacity |
|
| 11 | FLL200IB-1 |
Eudyna Devices |
(FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET |
|
| 12 | FLL200IB-2 |
Eudyna Devices |
(FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET |
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