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The FLL21E135IX is a high power GaAs FET that offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers. This device is target for high voltage, low current operation in digitally modulated base station amplifiers. This product is ideally suited for W-CDMA and Multi-carrier PCS base station amplifiers .
High Voltage Operation (VDS=28V) GaAs FET High Gain: 15.5dB(typ.) at Pout=44.8dBm(Avg.) Broad Frequency Range : 2110 to 2170MHz High Reliability DESCRIPTION The FLL21E135IX is a high power GaAs FET that offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers. This device is target for high voltage, low current operation in digitally modulated base station amplifiers. This product is ideally suited for W-CDMA and Multi-carrier PCS base station amplifiers while offering high gain, long term reliability and ease of use. ABSOLUTE MAXIMUM.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FLL21E180IU |
Eudyna Devices |
High Voltage - High Power GaAs FET |
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| 2 | FLL21E004ME |
Eudyna Devices |
High Voltage - High Power GaAs FET |
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| 3 | FLL21E010MK |
Eudyna Devices |
High Voltage - High Power GaAs FET |
|
| 4 | FLL21E040IK |
Eudyna Devices |
High Voltage - High Power GaAs FET |
|
| 5 | FLL21E045IY |
Eudyna Devices |
High Power GaAs FET |
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| 6 | FLL21E060IY |
Eudyna Devices |
High Power GaAs FET |
|
| 7 | FLL21E060IY |
Eudyna Devices |
High Power GaAs FET |
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| 8 | FLL21E090IK |
Eudyna Devices |
High Voltage - High Power GaAs FET |
|
| 9 | FLL21E090IY |
Eudyna Devices |
High Power GaAs FET |
|
| 10 | FLL200 |
FAAM |
The Relationship for Open Circuit Voltage and Residual Capacity |
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| 11 | FLL200IB-1 |
Eudyna Devices |
(FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET |
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| 12 | FLL200IB-2 |
Eudyna Devices |
(FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET |
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