FJV3107R FJV3107R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=22KΩ, R2=47KΩ) • Complement to FJV4107R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking Equivalent Circuit C R2 7 NPN Epitaxial Silicon Transistor R1 B R2 E Absolute Maximum Ratings Ta=25°.
e Input On Voltage Input Resistor Resistor Ratio Test Condition IC=10µΑ, IE=0 IC=100µA, IB=0 VCB=40V, IE=0 VCE=5V, IC=5mA IC=10mA, IB=0.5mA VCB=10V, IE=0 f=1MHz VCE=10V, IC=5mA VCE=5V, IC=100µA VCE=0.3V, IC=2mA 15 0.42 22 0.47 0.4 2.5 29 0.52 3.7 250 68 0.3 V pF MHz V V KΩ Min. 50 50 0.1 Typ. Max. Units V V µA ©2002 Fairchild Semiconductor Corporation Rev. A, August 2002 FJV3107R Typical Characteristics 1000 VCE = 5V R1 = 22K R2 = 47K 100 VCE = 0.3V R1 = 22K R2 = 47K VI(on)[V], INPUT VOLTAGE hFE, DC CURRENT GAIN 100 10 10 1 1 0.1 1 10 100 0.1 0.1 1 10 100 IC[mA], COLLECT.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FJV3101 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
2 | FJV3101R |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
3 | FJV3102 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
4 | FJV3102R |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
5 | FJV3103R |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
6 | FJV3104R |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
7 | FJV3105R |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
8 | FJV3106R |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
9 | FJV3108R |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
10 | FJV3109R |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
11 | FJV3110R |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
12 | FJV3111 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |