FJV3101R FJV3101R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=4.7KΩ) • Complement to FJV4101R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R21 NPN Epitaxial Silicon Transistor R1 B R2 E Absolute Maximum Ratings Ta=2.
age Input On Voltage Input Resistor Resistor Ratio Test Condition IC=10µA, IE=0 IC=100µA, IB=0 VCB=40V, IE=0 VCE=5V, IC=10mA IC=10mA, IB=0.5mA VCE=10V, IC=5mA VCB=10V, IE=0 f=1.0MHz VCE=5V, IC=100µΑ VCE=0.3V, IC=20mA 3.2 0.9 4.7 1 0.5 3 6.2 1.1 250 3.7 20 0.3 V MHz pF V V KΩ Min. 50 50 0.1 Typ. Max. Units V V µA ©2002 Fairchild Semiconductor Corporation Rev. A, July 2002 FJV3101R Typical Characteristics 1000 VCE = 5V R1 = 4.7K R2 = 4.7K 100 V CE =0.3V R1 = 4.7K R2 = 4.7K VI(on)[V], INPUT VOLTAGE hFE, DC CURRENT GAIN 10 100 1 10 1 10 100 1000 0.1 0.1 1 10 100 IC[mA], COLLECTOR.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FJV3101 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
2 | FJV3102 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
3 | FJV3102R |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
4 | FJV3103R |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
5 | FJV3104R |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
6 | FJV3105R |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
7 | FJV3106R |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
8 | FJV3107R |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
9 | FJV3108R |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
10 | FJV3109R |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
11 | FJV3110R |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
12 | FJV3111 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |