FJV3106R - Fairchild Semiconductor

FJV3106R NPN Epitaxial Silicon Transistor

FJV3106R FJV3106R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=47KΩ) • Complement to FJV4106R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking Equivalent Circuit C R26 NPN Epitaxial Silicon Transistor R1 B R2 E Absolute Maximum Ratings Ta=25°C.

Features

Input On Voltage Input Resistor Resistor Ratio Test Condition IC=10µA, IE=0 IC=100µA, IB=0 VCB=40V, IE=0 VCE=5V, IC=5mA IC=10mA, IB=0.5mA VCE=10mA, IE=0 f=1.0MHz VCB=10V, IC=5mA VCE=5V, IC=100µA VCE=0.3V, IC=1mA 7 0.19 10 0.21 0.3 1.4 13 0.24 3.7 250 68 0.3 V pF MHz V V KΩ Min. 50 50 0.1 Typ. Max. Units V V µA ©2002 Fairchild Semiconductor Corporation Rev. A, July 2002 FJV3106R Typical Characteristics 1000 100 VCE = 5V R1 = 10K R2 = 47K VCE =0.3V R1 = 10K R2 = 47K VI(on)[V], INPUT VOLTAGE hFE, DC CURRENT GAIN 100 10 10 1 1 0.1 1 10 100 0.1 0.1 1 10 100 IC[mA], COLLECTOR.