FJV3102 - Fairchild Semiconductor

FJV3102 NPN Epitaxial Silicon Transistor

FJV3102R FJV3102R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=10KΩ) • Complement to FJV4102R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking Equivalent Circuit C R22 R1 B R2 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C un.

Features

e Input On Voltage Input Resistor Resistor Ratio Test Condition IC=10µA, IE=0 IC=100µA, IB=0 VCB=40V, IE=0 VCE=5V, IC=5mA IC=10mA, IB=0.5mA VCE=10V, IC=5mA VCB=10V, IE=0 f=1.0MHz VCE=5V, IC=100µA VCE=0.3V, IC=10mA 7 0.9 10 1 0.5 3 13 1.1 250 3.7 30 0.3 V MHz pF V V KΩ Min. 50 50 0.1 Typ. Max. Units V V µA ©2002 Fairchild Semiconductor Corporation Rev. A, July 2002 FJV3102R Typical Characteristics 1000 100 VCE = 5V R1 = 10K R2 = 10K VCE =0.3V R1 = 10 K R2 = 10 K VI(on)[V], INPUT VOLTAGE 1 10 100 1000 hFE, DC CURRENT GAIN 10 100 1 10 0.1 0.1 1 10 100 IC[mA], COLLECTOR CURRENT .