FJP5027 - Fairchild Semiconductor

FJP5027 High Voltage and High Reliability

FJP5027 FJP5027 High Voltage and High Reliability • High Speed Switching • Wide SOA 1 TO-220 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collec.

Features

ion IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 IC = 1.5A, IB1 = -IB2 = 0.3A L = 2mH, Clamped VCB = 800V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.2A VCE = 5V, IC = 1A IC = 1.5A, IB = 0.3A IC = 1.5A, IB = 0.3A VCB = 10V, IE = 0, f = 1MHz VCE = 10V, IC = 0.2A VCC = 400V IC = 5IB1 = -2.5IB2 = 2A RL = 200Ω Value 1100 800 7 3 10 1.5 50 150 - 55 ~ 150 Min. 1100 800 7 800 Typ. 10 8 60 15 Units V V V A A A W °C °C Max. Units V V V V 10 µA 10 µA 40 2V 1.5 V pF MHz 0.5 µs 3 µs 0.3 µs hFE Classification Classification hFE1 N 10 ~ 20 R 15 ~ 30 O 20 ~ 40 ©2003 Fairchild Semiconductor .