FJP3305 — High Voltage Fast-Switching NPN Power Transistor October 2008 FJP3305 High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Regulator 1 TO-220 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VCBO .
reakdwon Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain
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Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product Output Capacitance Turn On Time Storge Time Fall Time
IC = 500mA, IE = 0 IC = 5mA, IB = 0 IE = 500mA, IC = 0 VCB = 700V, IE = 0 VEB = 9V, IC = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 2A IC = 1A, IB = 0.2A IC = 2A, IB = 0.5A IC = 4A, IB = 1A IC = 1A, IB = 0.2A IC = 2A, IB = 0.5A VCE = 10V, IC = 0.5A VCB = 10V, f = 1MHz VCC = 125V, IC = 2A IB1 = -IB2 =.
·Large current capacitance ·High Power Dissipation ·Low saturation voltage ·Minimum Lot-to-Lot variations for robust dev.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FJP3835 |
Fairchild Semiconductor |
Power Amplifier | |
2 | FJP13007 |
Fairchild Semiconductor |
High Voltage Fast-Switching NPN Power Transistor | |
3 | FJP13007 |
ON Semiconductor |
High Voltage Fast-Switching NPN Power Transistor | |
4 | FJP13009 |
Fairchild Semiconductor |
High-Voltage Fast-Switching NPN Power Transistor | |
5 | FJP13009 |
INCHANGE |
Silicon NPN Power Transistor | |
6 | FJP1943 |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor | |
7 | FJP1943OTU |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor | |
8 | FJP1943RTU |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor | |
9 | FJP2145 |
Fairchild Semiconductor |
NPN Power Transistor | |
10 | FJP2160D |
Fairchild Semiconductor |
NPN Silicon Transistor | |
11 | FJP5027 |
Fairchild Semiconductor |
High Voltage and High Reliability | |
12 | FJP5027 |
INCHANGE |
NPN Transistor |