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The FJP13009 is a 700 V, 12 A NPN silicon epitaxial planar transistor. The FJP13009 is available with multiple hFE bin classes for ease of design use. The FJP13009 is designed for high speed switching applications which utilizes the industry standard TO-220 package offering flexibility in design and excellent power dissipation. 1 TO-220 1.Base 2.Collector 3.
• High-Voltage Capability
• High Switching Speed
Applications
• Electronic Ballast
• Switching Regulator
• Motor Control
• Switched Mode Power Supply
Description
The FJP13009 is a 700 V, 12 A NPN silicon epitaxial planar transistor. The FJP13009 is available with multiple hFE bin classes for ease of design use. The FJP13009 is designed for high speed switching applications which utilizes the industry standard TO-220 package offering flexibility in design and excellent power dissipation.
1 TO-220 1.Base 2.Collector 3.Emitter
Ordering Information
Part Number(1) FJP13009TU
FJP13009H2TU
Top M.
FJP13009 - INCHANGE
·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC.
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