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FJP5027 |
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| Part Number | FJP5027 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·Wide SOA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATING... |
| Features |
oltage
IE= 1mA; IC= 0
7
V
BVCEO Collector- Emitter Breakdown Voltage IC= 5mA; IB= 0
800
V
BVCBO Collector- Base Breakdown Voltage IC= 1mA; IE= 0
1100
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A
2.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 1.5A; IB= 0.3A
1.5
V
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
10 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
10 μA
hFE1
DC Current Gain
IC= 0.2A; VCE= 5V
10
40
hFE2
DC Current Gain
IC= 1A; VCE= 5V
8
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
60
pF
fT hFE1 ：
Current-Gain—Bandwidt... |
| Document |
 FJP5027 Data Sheet
PDF 210.53KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FJP5027 |
Fairchild Semiconductor |
High Voltage and High Reliability |
|
| 2 | FJP5304D |
Fairchild Semiconductor |
NPN Silicon Transistor |
|
| 3 | FJP5555 |
Fairchild Semiconductor |
NPN Silicon Transistor |
|
| 4 | FJP13007 |
Fairchild Semiconductor |
High Voltage Fast-Switching NPN Power Transistor |
|
| 5 | FJP13007 |
ON Semiconductor |
High Voltage Fast-Switching NPN Power Transistor |
|