FJN3314R - Fairchild Semiconductor

FJN3314R NPN Epitaxial Silicon Transistor

FJN3314R FJN3314R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =4.7KΩ, R2=47KΩ) • Complement to FJN4314R 1 TO-92 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC .

Features

e Input Resistor Resistor Ratio Test Condition IC=10µA, IE=0 IC=100µA, IB=0 VCB=40V, IE=0 VCE=5V, IC=5mA IC=10mA, IB=0.5mA VCE=10V, IC=5mA VCB=10V, IE=0 f=1.0MHz VCE=5V, IC=100µA VCE=0.2V, IC=5mA 3.2 0.09 4.7 0.1 0.5 1.3 6.2 0.11 250 3.7 68 0.3 V MHz pF V V KΩ Min. 50 50 0.1 Typ. Max. Units V V µA ©2002 Fairchild Semiconductor Corporation Rev. A, August 2002 FJN3314R Package Dimensions TO-92 4.58
  –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38
  –0.05 +0.10 3.86MAX 1.02 ±0.10 0.38
  –0.05 +0.10 (R2.29) (0.25) Dimensions in.