FJN13003 - Fairchild Semiconductor

FJN13003 NPN Silicon Transistor Planar Silicon Transistor

FJN13003 FJN13003 High Voltage Switch Mode Application • High Speed Switching • Suitable for Electronic Ballast up to 21W 1 TO-92 1. Emitter 2. Collector 3.Base NPN Silicon Transistor Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Parameter Collector-Base Voltage Collector.

Features

=500µA, IE=0 IC=5mA, IB=0 IE=500µA, IC=0 VEB=9V, IC=0 VCE=2V, IC=0.5A VCE=2V, IC=1.0A IC=0.5A, IB=0.1A IC=1.0A, IB=0.25A IC=1.5A, IB=0.5A VBE (sat) fT tON tSTG tF Base-Emitter Saturation Voltage Current Gain Bandwidth Product Turn ON Time Storage Time Fall Time IC=0.5A, IB=0.1A IC=1.0A, IB=0.25A VCE=10V, IC=0.1A VCC=125V, IC=1A, IB1=0.2A, IB2=-0.2A, RL = 125Ω 4 1.1 4.0 0.7 9 5 0.5 1.0 3.0 1.0 1.2 V V V V V MHz µs µs µs Min. 700 400 9 10 21 Typ. Max. Units V V V µA ©2001 Fairchild Semiconductor Corporation Rev. A, July 2001 FJN13003 Typical Characteristics (Continued) 2.0 100 o IC [A], .