FJA4310 — NPN Epitaxial Silicon Transistor FJA4310 NPN Epitaxial Silicon Transistor • Audio Power Amplifier • High Current Capability : IC=10A • High Power Dissipation • Wide S.O.A • Complement to FJA4210 October 2008 1 TO-3P 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* Ta = 25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG .
ter Saturation Voltage
Cob
Output Capacitance
fT
Current Gain Bandwidth Product
* Pulse Test: Pulse Width£300ms, Duty Cycle£2%
IC=5mA, IE=0 IC=50mA, RBE=¥ IE=5mA, IC=0 VCB=200V, IE=0 VEB=6V, IC=0 VCE=4V, IC=3A IC=5A, IB=0.5A VCB=10V, f=1MHz VCE=5V, IC=1A
hFE Classification
Classification hFE
R 50 ~ 100
O 70 ~ 140
Ratings 200 140 6 10 1.5 100 150
- 55 ~ 150
Units V V V A A W °C °C
Min. 200 140
6
50
Typ.
250 30
Max.
10 10 180 0.5
Units V V V mA mA
V pF MHz
Y 90 ~ 180
© 2008 Fairchild Semiconductor Corporation
FJA4310 Rev. C1
1
www.fairchildsemi.com
FJA4310 — NPN Epitaxial Si.
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·DC Current Gain- : hFE= 50(Min)@ IC= 3A ·Complement to Type.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FJA4313 |
INCHANGE |
NPN Transistor | |
2 | FJA4313 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
3 | FJA4210 |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor | |
4 | FJA4210 |
INCHANGE |
PNP Transistor | |
5 | FJA4213 |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor | |
6 | FJA4213 |
INCHANGE |
PNP Transistor | |
7 | FJA13009 |
NELL SEMICONDUCTOR |
Silicon NPN Transistor | |
8 | FJA13009 |
Fairchild Semiconductor |
High Voltage Switch Mode Applications | |
9 | FJA3835 |
Fairchild Semiconductor |
Power Amplifier | |
10 | FJAF4310 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
11 | FJAF6806D |
Fairchild Semiconductor |
NPN Triple Diffused Planar Silicon Transistor | |
12 | FJAF6808D |
Fairchild Semiconductor |
NPN Triple Diffused Planar Silicon Transistor |