FJAF4310 - Fairchild Semiconductor

FJAF4310 NPN Epitaxial Silicon Transistor

FJAF4310 — NPN Epitaxial Silicon Transistor October 2009 FJAF4310 NPN Epitaxial Silicon Transistor Features • Audio Power Amplifier • High Current Capability : IC=10A • High Power Dissipation • Wide S.O.A • Complement to FJAF4210 Absolute Maximum Ratings* TA=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC RθJC TJ TSTG Parameter Collector-Bas.

Features

• Audio Power Amplifier
• High Current Capability : IC=10A
• High Power Dissipation
• Wide S.O.A
• Complement to FJAF4210 Absolute Maximum Ratings
* TA=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC RθJC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Base Current (DC) Collector Dissipation (TC=25°C) Junction to Case Junction Temperature Storage Temperature 1 TO-3PF 1.Base 2.Collector 3.Emitter Value 200 140 6 10 1.5 80 1.48 150 - 55 ~ 150 Units V V V A A W °C/W °C °C Electrical Characteristics TA=25°C unless othe.