SEMICONDUCTOR FJA13009 Silicon NPN triple diffusion planar transistor (High voltage switching transistor) 12A/400V/130W 5 . 0 ±0 . 2 RoHS RoHS Nell High Power Products 2.0 19.9±0.3 4.0 TO-3P(B) 20.0 min FEATURES High-speed switching High collector to base voltage VCBO Satisfactory linearity of foward current transfer ratio hFE TO-3P package which can.
High-speed switching High collector to base voltage VCBO Satisfactory linearity of foward current transfer ratio hFE TO-3P package which can be installed to the heat sink with one screw 4.0 max 2 3 +0.2 1.05 -0.1 5.45±0.1 C E +0.2 0.65 -0.1 5.45±0.1 B 1.8 15.6±0.4 9.6 4.8±0.2 2.0±0.1 Φ 3.2 ± 0,1 1.4 C APPLICATIONS Switching regulator and general purpose Ultrasonic generators High frequency inverters 1 2 3 B E NPN All dimensions in millimeters ABSOLUTE MAXIMUM RATINGS (TC = 25°C) SYMBOL VCBO V CEO V EBO IC I CP IB PC Tj T stg PARAMETER Collector to base voltage Collector to emi.
FJA13009 FJA13009 High Voltage Switch Mode Applications • High Speed Switching • Suitable for Switching Regulator and M.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FJA3835 |
Fairchild Semiconductor |
Power Amplifier | |
2 | FJA4210 |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor | |
3 | FJA4210 |
INCHANGE |
PNP Transistor | |
4 | FJA4213 |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor | |
5 | FJA4213 |
INCHANGE |
PNP Transistor | |
6 | FJA4310 |
INCHANGE |
NPN Transistor | |
7 | FJA4310 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
8 | FJA4313 |
INCHANGE |
NPN Transistor | |
9 | FJA4313 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
10 | FJAF4310 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
11 | FJAF6806D |
Fairchild Semiconductor |
NPN Triple Diffused Planar Silicon Transistor | |
12 | FJAF6808D |
Fairchild Semiconductor |
NPN Triple Diffused Planar Silicon Transistor |