FJA3835 - Fairchild Semiconductor

FJA3835 Power Amplifier

FJA3835 FJA3835 Power Amplifier • High Current Capability : IC=8A • High Power Dissipation • Wide S.O.A 1 TO-3P 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Coll.

Features

V, IC=1A VCB=10V, f=1MHz VCC=20V, IC=1A=10IB1=-10IB2 RL=20Ω Min. 200 120 8 Typ. Max. Units V V V 0.1 0.1 120 250 0.5 1.2 30 210 0.26 0.68 6.68 mA mA V V MHz pF µs µs µs Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Turn On Time Fall Time Storage Time ©2003 Fairchild Semiconductor Corporation Rev. A, December 2003 FJA3835 Typical Characteristics 7 1000 IB = 35mA 6 VCE = 4V IC [A], COLLECTOR CURRENT hFE, DC CURRENT GAIN 5 TC = 125 C o TC = 75 C o 4 100 3 TC = - 25 C o TC = 25 C o IB = 10m.