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Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applications where very low On-Voltage Drop is a required feature. Applications • HID Lamp Applications • Piezo Fuel Injection Applications C C G G E D-PAK E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF I FM PD TJ Tstg TL Not.
• High Current Capability
• Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A
• High Input Impedance
tm
Description
Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applications where very low On-Voltage Drop is a required feature.
Applications
• HID Lamp Applications
• Piezo Fuel Injection Applications
C
C
G
G E
D-PAK
E
Absolute Maximum Ratings
Symbol
VCES VGES IC ICM (1) IF I FM PD TJ Tstg TL
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Description
Collector-Emitter Voltag.
FGD3N60LSD - ON Semiconductor
ON Semiconductor's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FGD3N60UNDF |
Fairchild Semiconductor |
Short Circuit Rated IGBT |
|
| 2 | FGD3040G2-F085 |
ON Semiconductor |
N-Channel IGBT |
|
| 3 | FGD3040G2-F085C |
ON Semiconductor |
N-Channel IGBT |
|
| 4 | FGD3040G2-F085V |
ON Semiconductor |
N-Channel IGBT |
|
| 5 | FGD3040G2_F085 |
Fairchild Semiconductor |
N-Channel Ignition IGBT |
|
| 6 | FGD3050G2 |
ON Semiconductor |
N-Channel IGBT |
|
| 7 | FGD3050G2V |
ON Semiconductor |
N-Channel IGBT |
|
| 8 | FGD3245G2-F085 |
ON Semiconductor |
N-Channel IGBT |
|
| 9 | FGD3245G2-F085C |
ON Semiconductor |
N-Channel IGBT |
|
| 10 | FGD3245G2-F085V |
ON Semiconductor |
N-Channel IGBT |
|
| 11 | FGD3245G2_F085 |
Fairchild Semiconductor |
N-Channel Ignition IGBT |
|
| 12 | FGD3325G2-F085 |
ON Semiconductor |
N-Channel Ignition IGBT |
|