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DATA SHEET www.onsemi.com ECOSPARK) II, Ignition IGBT COLLECTOR 300 mJ, 500 V, N−Channel Ignition IGBT FGD3050G2 Features • SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • This Device is Pb−Free, Halid Free and is RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • Coil on Plug App.
• SCIS Energy = 300 mJ at TJ = 25°C
• Logic Level Gate Drive
• AEC−Q101 Qualified and PPAP Capable
• This Device is Pb−Free, Halid Free and is RoHS Compliant
Applications
• Automotive Ignition Coil Driver Circuits
• Coil on Plug Application
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
BVCER Collector to Emitter Breakdown Voltage (IC = 1 mA)
500
V
BVECS Emitter to Collector Voltage − Reverse Battery Condition (IC = 10 mA)
20
V
ESCIS25 ISCIS = 14.2 A, L = 3.0 mHy, RGE = 1 kW
300
mJ
TC = 25°C
ESCIS150 ISCIS = 11.0 A, L = 3.0 mHy, RGE = 1 kW
180
.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FGD3050G2V |
ON Semiconductor |
N-Channel IGBT |
|
| 2 | FGD3040G2-F085 |
ON Semiconductor |
N-Channel IGBT |
|
| 3 | FGD3040G2-F085C |
ON Semiconductor |
N-Channel IGBT |
|
| 4 | FGD3040G2-F085V |
ON Semiconductor |
N-Channel IGBT |
|
| 5 | FGD3040G2_F085 |
Fairchild Semiconductor |
N-Channel Ignition IGBT |
|
| 6 | FGD3245G2-F085 |
ON Semiconductor |
N-Channel IGBT |
|
| 7 | FGD3245G2-F085C |
ON Semiconductor |
N-Channel IGBT |
|
| 8 | FGD3245G2-F085V |
ON Semiconductor |
N-Channel IGBT |
|
| 9 | FGD3245G2_F085 |
Fairchild Semiconductor |
N-Channel Ignition IGBT |
|
| 10 | FGD3325G2-F085 |
ON Semiconductor |
N-Channel Ignition IGBT |
|
| 11 | FGD3325G2_F085 |
Fairchild Semiconductor |
N-Channel Ignition IGBT |
|
| 12 | FGD3440G2-F085 |
ON Semiconductor |
N-Channel IGBT |
|