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FGD3N60LSD |
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| Part Number | FGD3N60LSD |
| Manufacturer | Fairchild Semiconductor |
| Description | Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applications where very low On-Voltage Drop is a required feature. Applications •... |
| Features |
• High Current Capability • Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A • High Input Impedance tm Description Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applications where very low On-Voltage Drop is a required feature. Applications • HID Lamp Applications • Piezo Fuel Injection Applications C C G G E D-PAK E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF I FM PD TJ Tstg TL Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Description Collector-Emitter Voltag... |
| Document |
 FGD3N60LSD Data Sheet
PDF 761.90KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FGD3N60LSD |
ON Semiconductor |
IGBT |
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| 2 | FGD3N60UNDF |
Fairchild Semiconductor |
Short Circuit Rated IGBT |
|
| 3 | FGD3040G2-F085 |
ON Semiconductor |
N-Channel IGBT |
|
| 4 | FGD3040G2-F085C |
ON Semiconductor |
N-Channel IGBT |
|
| 5 | FGD3040G2-F085V |
ON Semiconductor |
N-Channel IGBT |
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