Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
FGD3040G2-F085V EcoSPARK) 2 Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT Features • SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • Coil on Plug Application MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Symbol Parame.
• SCIS Energy = 300 mJ at TJ = 25°C
• Logic Level Gate Drive
• AEC−Q101 Qualified and PPAP Capable
• RoHS Compliant
Applications
• Automotive Ignition Coil Driver Circuits
• Coil on Plug Application
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Symbol
Parameter
Value
Units
BVCER BVECS ESCIS25
Collector to Emitter Breakdown Voltage (IC = 1 mA) Emitter to Collector Voltage − Reverse Battery Condition (IC = 10 mA) Self Clamping Inductive Switching Energy (Note 1)
400 28 300
V V mJ
ESCIS150 Self Clamping Inductive Switching Energy (Note 2)
170
mJ
IC25 IC110 VGEM
Collector Curr.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FGD3040G2-F085 |
ON Semiconductor |
N-Channel IGBT |
|
| 2 | FGD3040G2-F085C |
ON Semiconductor |
N-Channel IGBT |
|
| 3 | FGD3040G2_F085 |
Fairchild Semiconductor |
N-Channel Ignition IGBT |
|
| 4 | FGD3050G2 |
ON Semiconductor |
N-Channel IGBT |
|
| 5 | FGD3050G2V |
ON Semiconductor |
N-Channel IGBT |
|
| 6 | FGD3245G2-F085 |
ON Semiconductor |
N-Channel IGBT |
|
| 7 | FGD3245G2-F085C |
ON Semiconductor |
N-Channel IGBT |
|
| 8 | FGD3245G2-F085V |
ON Semiconductor |
N-Channel IGBT |
|
| 9 | FGD3245G2_F085 |
Fairchild Semiconductor |
N-Channel Ignition IGBT |
|
| 10 | FGD3325G2-F085 |
ON Semiconductor |
N-Channel Ignition IGBT |
|
| 11 | FGD3325G2_F085 |
Fairchild Semiconductor |
N-Channel Ignition IGBT |
|
| 12 | FGD3440G2-F085 |
ON Semiconductor |
N-Channel IGBT |
|