EcoSPARK) Ignition IGBT 20 mJ, 360 V, N−Channel Ignition IGBT FGB3236-F085, FGI3236-F085 Features • Industry Standard D2PAK Package • SCIS Energy = 330 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • Coil On Plug Applications MAXIMUM RATINGS (TA = 25°.
• Industry Standard D2PAK Package
• SCIS Energy = 330 mJ at TJ = 25°C
• Logic Level Gate Drive
• AEC−Q101 Qualified and PPAP Capable
• RoHS Compliant
Applications
• Automotive Ignition Coil Driver Circuits
• Coil On Plug Applications
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Value
Units
BVCER Collector to Emitter Breakdown Voltage
360
(IC = 1 mA)
BVECS Emitter to Collector Voltage − Reverse
24
Battery Condition (IC = 10 mA)
ESCIS25 Self Clamping Inductive Switching Energy
320
(ISCIS = 14.7 A, L = 3.0 mHy, TJ = 25°C)
ESCIS150 Self Clamping Inductive Swi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FGB3236_F085 |
Fairchild Semiconductor |
N-Channel Ignition IGBT | |
2 | FGB3245G2-F085 |
ON Semiconductor |
N-Channel IGBT | |
3 | FGB3245G2_F085 |
Fairchild Semiconductor |
N-Channel Ignition IGBT | |
4 | FGB3040CS |
Fairchild Semiconductor |
N-Channel Ignition IGBT | |
5 | FGB3040CS |
ON Semiconductor |
N-Channel IGBT | |
6 | FGB3040G2-F085 |
ON Semiconductor |
N-Channel IGBT | |
7 | FGB3040G2-F085C |
ON Semiconductor |
N-Channel IGBT | |
8 | FGB3040G2_F085 |
Fairchild Semiconductor |
N-Channel Ignition IGBT | |
9 | FGB3056-F085 |
ON Semiconductor |
N-Channel IGBT | |
10 | FGB30N6S2 |
Fairchild Semiconductor |
600V/ SMPS II Series N-Channel IGBT | |
11 | FGB30N6S2D |
Fairchild Semiconductor |
600V/ SMPS II Series N-Channel IGBT | |
12 | FGB3440G2-F085 |
ON Semiconductor |
N-Channel IGBT |