Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for .
• 100kHz Operation at 390V, 14A
• 200kHZ Operation at 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125oC
• Low Gate Charge . . . . . . . . . 23nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ
• Low Conduction Loss
IGBT formerly Developmental Type TA49336 Diode formerly Developmental Type TA49390
Package
JEDEC STYLE TO-247
Symbol
C
E
C G
JEDEC STYLE TO-220AB
JEDEC STYLE TO-263AB
E
C
G C G E
G
E
Device Maximum Ratings TC= 25°C unless otherwi.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FGB30N6S2 |
Fairchild Semiconductor |
600V/ SMPS II Series N-Channel IGBT |
|
| 2 | FGB3040CS |
Fairchild Semiconductor |
N-Channel Ignition IGBT |
|
| 3 | FGB3040CS |
ON Semiconductor |
N-Channel IGBT |
|
| 4 | FGB3040G2-F085 |
ON Semiconductor |
N-Channel IGBT |
|
| 5 | FGB3040G2-F085C |
ON Semiconductor |
N-Channel IGBT |
|
| 6 | FGB3040G2_F085 |
Fairchild Semiconductor |
N-Channel Ignition IGBT |
|
| 7 | FGB3056-F085 |
ON Semiconductor |
N-Channel IGBT |
|
| 8 | FGB3236-F085 |
ON Semiconductor |
IGBT |
|
| 9 | FGB3236_F085 |
Fairchild Semiconductor |
N-Channel Ignition IGBT |
|
| 10 | FGB3245G2-F085 |
ON Semiconductor |
N-Channel IGBT |
|
| 11 | FGB3245G2_F085 |
Fairchild Semiconductor |
N-Channel Ignition IGBT |
|
| 12 | FGB3440G2-F085 |
ON Semiconductor |
N-Channel IGBT |
|