FGD3040G2-F085C FGB3040G2-F085C EcoSPARK) 2 Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT Features • SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • High Current Ignition System • Coil on Plug.
• SCIS Energy = 300 mJ at TJ = 25°C
• Logic Level Gate Drive
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Automotive Ignition Coil Driver Circuits
• High Current Ignition System
• Coil on Plug Application
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
BVCER Collector to Emitter Breakdown Voltage (IC = 1 mA)
400 V
BVECS Emitter to Collector Voltage − Reverse Battery Condition (IC = 10 mA)
28
V
ESCIS25 ESCIS150
IC25 IC110 VGEM
PD
TJ, TSTG
ISCIS = 14.2 A, L = 3.0 mHy, RGE = 1 KW, TC = 25°C (Not.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FGB3040G2-F085 |
ON Semiconductor |
N-Channel IGBT | |
2 | FGB3040G2_F085 |
Fairchild Semiconductor |
N-Channel Ignition IGBT | |
3 | FGB3040CS |
Fairchild Semiconductor |
N-Channel Ignition IGBT | |
4 | FGB3040CS |
ON Semiconductor |
N-Channel IGBT | |
5 | FGB3056-F085 |
ON Semiconductor |
N-Channel IGBT | |
6 | FGB30N6S2 |
Fairchild Semiconductor |
600V/ SMPS II Series N-Channel IGBT | |
7 | FGB30N6S2D |
Fairchild Semiconductor |
600V/ SMPS II Series N-Channel IGBT | |
8 | FGB3236-F085 |
ON Semiconductor |
IGBT | |
9 | FGB3236_F085 |
Fairchild Semiconductor |
N-Channel Ignition IGBT | |
10 | FGB3245G2-F085 |
ON Semiconductor |
N-Channel IGBT | |
11 | FGB3245G2_F085 |
Fairchild Semiconductor |
N-Channel Ignition IGBT | |
12 | FGB3440G2-F085 |
ON Semiconductor |
N-Channel IGBT |