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The FGB3040CS is an lgnition IGBT that offers outstanding SCIS capability along with a ratiometric emitter current sensing capability. This sensing is based on a emitter active area ratio of 200:1. The output is provided through a fourth (sense) lead. This signal provides a current level that is proportional to the main collector to emitter current. The effe.
SCIS Energy = 300mJ at TJ = 25oC Logic Level Gate Drive Qualified to AEC Q101 RoHS Compliant Package Symbol Device Maximum Ratings TA = 25°C unless otherwi.
FGB3040CS - ON Semiconductor
The FGB3040CS is an lgnition IGBT that offers outstanding SCIS capability along with a ratiometric emitter current sensi.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FGB3040G2-F085 |
ON Semiconductor |
N-Channel IGBT |
|
| 2 | FGB3040G2-F085C |
ON Semiconductor |
N-Channel IGBT |
|
| 3 | FGB3040G2_F085 |
Fairchild Semiconductor |
N-Channel Ignition IGBT |
|
| 4 | FGB3056-F085 |
ON Semiconductor |
N-Channel IGBT |
|
| 5 | FGB30N6S2 |
Fairchild Semiconductor |
600V/ SMPS II Series N-Channel IGBT |
|
| 6 | FGB30N6S2D |
Fairchild Semiconductor |
600V/ SMPS II Series N-Channel IGBT |
|
| 7 | FGB3236-F085 |
ON Semiconductor |
IGBT |
|
| 8 | FGB3236_F085 |
Fairchild Semiconductor |
N-Channel Ignition IGBT |
|
| 9 | FGB3245G2-F085 |
ON Semiconductor |
N-Channel IGBT |
|
| 10 | FGB3245G2_F085 |
Fairchild Semiconductor |
N-Channel Ignition IGBT |
|
| 11 | FGB3440G2-F085 |
ON Semiconductor |
N-Channel IGBT |
|
| 12 | FGB3440G2_F085 |
Fairchild Semiconductor |
N-Channel Ignition IGBT |
|