FDW262P - Fairchild Semiconductor

FDW262P 20V P-Channel PowerTrench MOSFET

This P-Channel 1.8V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • –4.5 A, –20 V. RDS(ON) = 47 mΩ @ VGS = –4.5 V RDS(ON) = 65 mΩ @ VGS = –2.5 V RDS(ON) = 100 mΩ @ VGS.

Features

•
  –4.5 A,
  –20 V. RDS(ON) = 47 mΩ @ VGS =
  –4.5 V RDS(ON) = 65 mΩ @ VGS =
  –2.5 V RDS(ON) = 100 mΩ @ VGS =
  –1.8 V
• RDS(ON) rated for use with 1.8 V logic
• Low gate charge (13nC typical)
• High performance trench technology for extremely low RDS(ON)
• Low profile TSSOP-8 package Applications
• Power management
• Load switch D S S D G S S D 5 6 7 8 4 3 2 1 TSSOP-8 Pin 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain
  –Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed TA=25oC unless otherwise noted Parameter Ratings
  –20 ±8 (Note 1a) Units V V A W °C
  –4.