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FDW262P |
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| Part Number | FDW262P |
| Manufacturer | Fairchild Semiconductor |
| Description | This P-Channel 1.8V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low... |
| Features |
• –4.5 A, –20 V. RDS(ON) = 47 mΩ @ VGS = –4.5 V RDS(ON) = 65 mΩ @ VGS = –2.5 V RDS(ON) = 100 mΩ @ VGS = –1.8 V • RDS(ON) rated for use with 1.8 V logic • Low gate charge (13nC typical) • High performance trench technology for extremely low RDS(ON) • Low profile TSSOP-8 package Applications • Power management • Load switch D S S D G S S D 5 6 7 8 4 3 2 1 TSSOP-8 Pin 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain –Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings –20 ±8 (Note 1a) Units V V A W °C –4... |
| Document |
 FDW262P Data Sheet
PDF 87.82KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDW2601NZ |
Fairchild Semiconductor |
Dual N-Channel 2.5V Specified PowerTrench MOSFET |
|
| 2 | FDW264P |
Fairchild Semiconductor |
P-Channel 2.5V Specified PowerTrench MOSFET |
|
| 3 | FDW2501N |
Fairchild Semiconductor |
Dual N-Channel 2.5V Specified PowerTrench MOSFET |
|
| 4 | FDW2501NZ |
Fairchild Semiconductor |
Dual N-Channel 2.5V Specified PowerTrench MOSFET |
|
| 5 | FDW2502P |
Fairchild Semiconductor |
Dual P-Channel 2.5V Specified PowerTrench MOSFET |
|