FDW2502PZ - Fairchild Semiconductor

FDW2502PZ Dual P-Channel 2.5V Specified PowerTrench MOSFET

This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V –12V). Features • –4.4 A, –20 V. RDS(ON) = 0.035 Ω @ V GS = –4.5 V RDS(ON) = 0.057 Ω @ V GS = –2.5 V. • Extended V GSS range (±12V) fo.

Features

•
  –4.4 A,
  –20 V. RDS(ON) = 0.035 Ω @ V GS =
  –4.5 V RDS(ON) = 0.057 Ω @ V GS =
  –2.5 V.
• Extended V GSS range (±12V) for battery applications.
• ESD protection diode (note 3).
• High performance trench technology for extremely low RDS(ON) .
• Low profile TSSOP-8 package. Applications
• Load switch
• Motor drive
• DC/DC conversion
• Power management G2 S2 S2 D2 G1 S1 S1 D1 Pin 1 1 2 3 4 8 7 6 5 TSSOP-8 Absolute Maximum Ratings Symbol V DSS V GSS ID PD TJ , TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed T A=25oC unless otherwise noted Parameter Ratings .