FDW264P - Fairchild Semiconductor

FDW264P P-Channel 2.5V Specified PowerTrench MOSFET

This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • –9.7 A, –20 V. RDS(ON) = 10.0 mΩ @ VGS = –4.5 V RDS(ON) = 14.5 mΩ @ VGS = –2.5 V • Extended VGSS range (±12V) for bat.

Features

•
  –9.7 A,
  –20 V. RDS(ON) = 10.0 mΩ @ VGS =
  –4.5 V RDS(ON) = 14.5 mΩ @ VGS =
  –2.5 V
• Extended VGSS range (±12V) for battery applications
•
• Low gate charge High performance trench technology for extremely low RDS(ON)
• Low profile TSSOP-8 package Applications
•
•
•
• Load switch Motor drive DC/DC conversion Power management D S S D G S S D Pin 1 5 6 7 8 4 3 2 1 TSSOP-8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed Power Dissipation TA=25oC unless otherwise noted Parameter Ratings
  –20 ± 12 (Note 1).