FDV305N - Fairchild Semiconductor

FDV305N 20V N-Channel MOSFET

This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Features • 0.9 A, 20 V RDS(ON) = 220 mΩ @ VGS = 4.5 V RDS(ON) = 300 mΩ @ VGS = 2.5 V • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS(ON) Applications • • • Load switch Batt.

Features

• 0.9 A, 20 V RDS(ON) = 220 mΩ @ VGS = 4.5 V RDS(ON) = 300 mΩ @ VGS = 2.5 V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely low RDS(ON) Applications
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• Load switch Battery protection Power management D D S SOT-23 G G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed Maximum Power Dissipation TA=25oC unless otherwise noted Parameter Ratings 20 ± 12 0.9 2 0.35
  –55 to +150 Units V V A W °C Operating and Storage Junction Temperature Range Thermal Charac.