This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellula.
-25 V, -0.46 A continuous, -1.5 A Peak. RDS(ON) = 1.1 Ω @ VGS = -4.5 V RDS(ON) = 1.5 Ω @ VGS= -2.7 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Compact industry standard SOT-23 surface mount package. SOT-23 Mark:304 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ,TSTG ESD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current TA = 25oC unless other wise noted FDV304P -25 -8 Units V V A - Continuous - Pul.
This P−Channel enhancement mode field effect transistors is produced using onsemi’s proprietary, high cell density, DMOS.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDV304P-F169 |
ON Semiconductor |
P-Channel Digital FET | |
2 | FDV301N |
Fairchild Semiconductor |
N-Channel Digital FET | |
3 | FDV301N |
ON Semiconductor |
N-Channel Digital FET | |
4 | FDV301N |
Kexin |
N-Channel MOSFET | |
5 | FDV301N-F169 |
ON Semiconductor |
N-Channel Digital FET | |
6 | FDV302P |
ON Semiconductor |
P-Channel Digital FET | |
7 | FDV302P |
Fairchild Semiconductor |
Digital FET/ P-Channel | |
8 | FDV303N |
Fairchild Semiconductor |
N-Channel Digital FET | |
9 | FDV303N |
ON Semiconductor |
N-Channel Digital FET | |
10 | FDV303N |
Kexin |
N-Channel MOSFET | |
11 | FDV305N |
Fairchild Semiconductor |
20V N-Channel MOSFET | |
12 | FDV-xx |
Premo |
EMC Filters - Single-Phase Filters - FD/FDC/FDV IEC Connector Filter |