FDV301N-F169 - ON Semiconductor

FDV301N-F169 N-Channel Digital FET

This N−Channel logic level enhancement mode field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resist.

Features

• 25 V, 0.22 A Continuous, 0.5 A Peak ♦ RDS(on) = 5 W @ VGS = 2.7 V ♦ RDS(on) = 4 W @ VGS = 4.5 V
• Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.06 V
• Gate−Source Zener for ESD Ruggedness. > 6 kV Human Body Model
• Replace Multiple NPN Digital Transistors with One DMOS FET
• This Device is Pb−Free and Halide Free Vcc D OUT IN G S GND Figure 1. Inverter Application DATA SHEET www.onsemi.com D G S SOT−23 CASE 318−08 MARKING DIAGRAM &E&Y 301&E&G &E = Designates Space &Y = Binary Calendar Year Coding Scheme 301 = Specific Device Cod.