FDS8958A-F085 - ON Semiconductor

FDS8958A-F085 Dual N&P-Channel MOSFET

These dual N- and P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-l.

Features

• Q1: N-Channel 7.0A, 30V RDS(on) = 0.028Ω @ VGS = 10V RDS(on) = 0.040Ω @ VGS = 4.5V
• Q2: P-Channel 5A, -30V - RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.5V
• Fast switching speed
• High power and handling capability in a widely used surface mount package
• Qualified to AEC Q101
• RoHS Compliant DD2DD2 DD1 DD1 SO-8 Pin 1 SO-8 G2 S2 SS1GS1 S G Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD EAS TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation Po.